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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. KTC3532T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTA1532T C L G High-Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING 20 20 5 1.5 3 300 0.9 150 -55 ) 150 UNIT V V V A A mA W J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=12V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=750mA, IB=15mA IC=750mA, IB=15mA VCE=2V, IC=100mA VCE=2V, IC=300mA VCB=10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 220F 470F VCC =5V RL MIN. 20 20 5 200 - OUTPUT Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =750mA 2001. 6. 26 Revision No : 0 I TSM HB TYP. 130 0.85 210 20 40 MAX. 0.1 0.1 200 1.2 560 MHz pF UNIT A A V V V mV V - 180 - nS - 20 - 1/3 KTC3532T I C - V CE 2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IB=0mA 2mA h FE - I C 1K 10mA 50m A 8mA 6mA DC CURRENT GAIN h FE 2 30mA 40mA A 0m VCE =2V Ta=75 C Ta=25 C Ta=-25 C 500 300 4mA 100 50 30 0.01 0.03 0.1 0.3 1 3 0.7 0.8 0.9 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) 500 300 I C /I B =20 VCE(sat) - I C 1K 500 300 I C /I B =50 100 50 30 C 75 Ta= 5C C =2 Ta a=-25 T 100 50 30 Ta= 75 C C 25 Ta= 5 C -2 Ta= 10 5 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COLLECTOR CURRENT I C (A) I C /I B =50 I C - V BE 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=-25 C Ta=75 C Ta=25 C VCE =2V 1 0.5 0.3 Ta=-25 C Ta=75 C Ta=25 C 0.1 0.01 0.03 0.1 0.3 1 3 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 26 Revision No : 0 2/3 KTC3532T f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =2V C ob - V CB 100 50 30 f=1MHz 100 50 30 0.01 0.03 0.1 0.3 1 3 10 5 3 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 5 3 COLLECTOR CURRENT I C (A) 1 0.5 0.3 COLLECTOR POWER DISSIPATION PC (W) I C MAX.(PULSED) I C MAX (CONTINUOUS) DC Pc - Ta 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) S 0 * 10 50 10 OP 1m m S* S 0 * S* 10 ER AT IO 0m S* N 0.1 0.05 0.03 0.01 0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0.3 1 3 10 30 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 6. 26 Revision No : 0 3/3 |
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